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氮化镓科技汇（GaNHEMT） 是氮化镓器件资讯类网站，以氮化镓器件为中心，从晶圆制造，到器件应用。希望各位同仁提出宝贵意见，联系电话：13632957632 朱先生
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2026-02-27 04:47:11
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氮化镓（GaN）器件应用技术,氮化镓器件发展动向-GaNHEMT氮化镓科技汇 首页 技术前瞻 氮化镓功率器件 氮化镓MOS 氮化镓二极管 关于我们 技术前瞻 用热反射测温技术测量GaN HEMT的瞬态 2022-04-01 阅读(1489) 第三代半导体器件CaN高电子迁移率晶体管（HEMT）具备较高的功率密度，同时具有较强的自热效应，在大功率工作条件下会产生较高的结温。根据半导体器件... 技术前瞻 氮化镓中铬含量的二次离子质谱分 2021-12-07 阅读(579) 氮化镓材料禁带宽度较大，是宽禁带半导体之一，被广泛用作微波功率晶体管和蓝色光发光器件的生产制造原材料。氮化镓材料的探究与使用是目前全世界... 氮化镓功率器件 一种阳极连接P型埋层的AlGaN/GaN肖特 2021-09-24 阅读(1549) 最近，AlGaN/GaN肖特基二极管（SBD）受到了越来越多的关注。该器件具有关断速度快、击穿电压高导通电阻小等特点，因而被业界广泛地认为是下一代功率器... 氮化镓功率器件 绝缘栅HEMT器件界面固定电荷分析 2021-09-14 阅读(1792) 绝缘栅HEMT器件中除了存在界面态外，栅绝缘层还会在界面引入固定电荷和体电荷，研究表明栅绝缘层与氮化物势垒层之间界面固定电荷密度可以高达10 13... 技术前瞻 Al2O3/AIN/AIGaN/GaN MIS-HEMT器件结构与特 2021-03-09 阅读(2426) 1. 器件结构与工艺 通过AlN栅介质层MIS-HEMT和Al2O3栅介质层MOS-HEMT器件对比研究发现，PEALD沉积AlN栅绝缘层可以大幅改善绝缘栅器件的界面和沟道输运特性；但... 技术前瞻 AIN/AIGaN/GaN MIS异质结构C-V分析 2021-01-13 阅读(3109) C-V测试是研究绝缘栅HEMT器件性能的重要方法，采用Keithley4200半导体表征系统的CVU模块测量了肖特基栅和绝缘栅异质结构的C-V特性。 1 . C - V曲线及载流子浓... 技术前瞻 4英寸半绝缘自支撑氮化镓晶圆片量 2020-12-16 阅读(1467) 由于同质外延结构带...
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