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created at

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Open Graph

title

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上海功成半导体科技有限公司(CoolSemi)主要从事低压屏蔽栅SGT、高压超结SJ、沟槽栅场截止型IGBT、SiC SBD、SiC MOSFET、GaN HEMT、功率模块IPM、功率IC的设计和研发。公司聚焦新能源、数据中心、汽车电子、智能家电以及高端消费电子领域,产品已应用于直流充电桩、通信电源、服务器电源、便携式储能、户用储能、光伏逆变器、车载PTC等细分市场。

image

site name

author

updated

2026-01-11 17:13:59

raw text

深圳市一万信息科技-深圳市一万信息科技有限公司 首页 产品中心 应用领域 新闻中心 关于功成 质量管理 样品申请 中文 EN SGT SJ IGBT IPM SiC SBD SiC MOSFET GaN HEMT 新能源 数据中心 汽车电子 智能家电 消费电子 公司简介 人才招聘 联系我们 聚焦光储充   迈向碳中和 Focus Solar, ESS and EV Charging   Toward Carbon Neutrality 了解更多 “芯”变频科技   开启智慧生活 Power Frequency Conversion Technology   Start Smart Living 了解更多 电能转换   效率提升 Increase Power Transform Efficiency 了解更多 核“芯”器件驱动 助力汽车电动智能化升级 Power Devices Empower Smart Electric Vehicle 了解更多 Previous Next 产品中心 Product Center 应用领域 Application Field 关于功成 About Coolsemi 产品中心 Product Center SGT SJ IGBT IPM SiC SBD SiC MOSFET GaN HEMT SGT Coolsemi的 SGT MOSFET通过采用超深沟槽设计降低导通电阻,导通损耗更低;通过屏蔽栅接源极,有效降低器件的米勒电容,提升器件的开关速度,降低系统功耗。 了解更多 SJ Coolsemi的高压超结MOSFET通过先进的超结技术和优化结构设计,实现极低的特征导通电阻(Rdson*A),有效提高电源的功率密度和效率。 了解更多 IGBT Coolsemi的IGBT功率器件采用沟槽栅场截止设计,降低外延层厚度以达到优异的Vcesat;通过先进的工艺设计从而降低器件的开关损耗,提升功率密度和效率。 了解更多 IPM Coolsemi研发的智能功率模块IPM,搭载了自主研发的高性能功...

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